3 edition of Anomalous photoconductivity found in the catalog.
M. I. KorsunskiiМ†
|Statement||[by] M. I. Korsunskii. Translated from Russian by E. Harnik.|
|LC Classifications||QC612.P5 K6613|
|The Physical Object|
|Pagination||xi, 166 p.|
|Number of Pages||166|
|LC Control Number||73012288|
It was shown, that all studied composite films exhibit photovoltaic properties and anomalous negative photoconductivity effect. The diffusion nature of observed photovoltaic effect was established. Quantum dots (QDs) of ZnO of 2−4 nm size have been encapsulated within a SiO2 matrix using aqueous chemically grown ZnO nanoparticles in a precursor of tetraethyl orthosilicate. The microstructure shows almost a uniform embedment of the QDs in the SiO2 matrix, resulting in a ZnO QDs−SiO2 composite structure. The photocurrent transients of the composite show an instant fall in .
The temperature dependence of persistent photoconductivity (PPC) has been investigated in high‐quality C 60 single crystals. We found that the rotational order and disorder phase transition (T c ≊ K) can significantly change the PPC behavior. At temperatures above T c, the PPC relaxation rate increases as temperature surprisingly, in the region T. Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation. Here, we present photoemission studies on Pr (Ca 1 − y Sr y) MnO 3 (y = ), SrTiO 3, and Ti 1 − x Co x O 2 (x = , 0.
Based on the band structure of amorphous semiconductors, Simmons and Taylor developed a theory of photoconductivity containing discrete trap levels To simplify the problem, the basic model contains two trap levels: one in the upper half of the band gap (E tn) and the other in the lower half (E tp), as shown in Fig. accordance with the Co-C film being of p-type, the Fermi level (E F. Bera A. & Basak D. Role of defects in the anomalous photoconductivity in ZnO nanowires. Appl. Phys. Lett. 94, (). Studenikin S. A., Golego N. & Cocivera M. Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution. J. Appl. Phys. 83, ().
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This book investigates the nature and properties of anomalous (negative) photoconductivity observed in specially treated (mercury-activated) amorphous selenium films. A phenomenological theory is given, some properties of long-life traps are described, and a new.
ISBN: X OCLC Number: Anomalous photoconductivity book Note: Translation of Anomalʹnai︠︡ fotoprovodimostʹ: Notes. Anomalous photoconductivity in aqueous solution grown ZnO nano-wires under steady ultraviolet light illumination was first report by Bera et al.
They had observed an exponential decay in the photocurrent and had attributed it to a complex formation between zinc Author: Varun G. Nair, R. Jayakrishnan, Jancy John, Jishad A. Salam, Akhil M. Anand, Aruna Raj. A persistent photoconductivity effect (PPC) has been investigated in Cu 2 ZnSnS 4 thin films and solar cells as a function of temperature.
An anomalous increase of the PPC decay time with temperature was observed in all by: Journals & Books; Help Download PDF Download.
Share. Export. Advanced. Chemical Physics Letters. VolumeIssues 4–6, 5 MayPages Anomalous photoconductivity of cobalt-doped zinc oxide nanobelts in air. Author links open overlay panel Liang Peng Jia-Li Zhai De-Jun Wang Ping Wang Yu Zhang Shan Pang Teng-Feng Xie. Show by: The effects of field inhomogeneities on photoconductivity were investigated by measuring the current of amorphous silicon field effect transistors dur.
In this manuscript we report the successful synthesis of both pristine Fe3O4 and the [email protected] [email protected] structure. From SEM images we observe that each Fe3O4 microsphere is composed of a large number of smaller nanoballs. We have extensively studied the photoluminescence and photoconductivity properties of both.
Journals & Books; Help The increase in current fluctuations with the rise in the sample cell temperature, above the temperature showing anomalous photoconductivity of Fc(COOH), is evident from Fig. Current fluctuations at cell temperatures higher than a certain value have also been noticed in other ferrocene derivatives studied.
The anomalous nature of the effect is manifested by the fact that the photo-emf developed in ferroelectrics and pyroelectrics is many orders of magnitude greater than the band gap and can reach 10 3 –10 5 V.
The anomalous photovoltaic effect in ferroelectrics has found extensive applications in volume phase holography. It is well known that the photovoltage in semiconductors, whatever its nature, cannot exceed the energy gap, which is several volts.
For instance, in a homogeneous semiconductor the Dember (diffusion) photovoltage does not exceed the following value  for an infinitely large intensity of the exciting light. The anomalous photocurrent decay in aqueous solution grown ZnO nanowires (NWs) under steady ultraviolet light illumination have been investigated.
The photocurrent growth-decay measurements using the above-band and subband gap light excitation energies in the as-grown and annealed NWs show that while a V Zn-related defect complex is formed by the surface adsorbed H 2.
Photoconductivity, the increase in the electrical conductivity of certain materials when they are exposed to light of sufficient energy.
Photoconductivity serves as a tool to understand the internal processes in these materials, and it is also widely used to detect the presence of light and measure. Shimakawa's research works with 2, citations and 2, reads, including: Kinetics of persistent photoconductivity in crystalline III–V semiconductors.
Negative photoconductivity effect has been observed in the Au/WO3 nanowire/Au devices in a high humidity environment, which might be attributed to the accumulation of H+ ions on the surface of WO3 nanowire. Under illumination with violet light ( nm), the photo-excited holes can oxidize the adsorbed H2O molecules to produce H+ ions and O2, while the photo-excited electrons at.
Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (–10 cm 2 /vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm 2 /vs and wide-bandgap is not suitable for photo/image sensor applications.
The incorporation of nitrogen into ZnO semiconductor can be. Photoconductivity is one of the critical parameters of materials applied to optoelectronics. In contrast to traditional semiconductors, specific ultrathin 2D layers present anomalous negative photoconductivity.
This opens a new avenue for designing novel optoelectronic devices. A review is presented of recent work on anomalous photoconductivity observed in specially prepared thin films of amorphous selenium and such semiconductor systems as Sb2S3-HgSe, HgSe-Se, As2S3.
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Primary search Search. Article. Anomalous photoconductivity effects of poly-N-epoxypropylcarbazole films with a high concentration of an anionic polymethine dye This book is a comprehensive review of their elementary.
Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation.
Here, we present photoemission studies on Pr(Ca1 − ySr y)MnO3 (y = ), SrTiO3, and Ti1 − xCo x O2 (x =) under. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence.
The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also.Anomalous Dielectric Behavior of a Pb/Sn Perovskite: Effect of Trapped Charges on Complex Photoconductivity Kento Yamada Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Yamadaoka, Suita, OsakaJapan.Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region.
Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in .